Diodes IncorporatedZXTN25060BZTAGP BJT
Trans GP BJT NPN 60V 5A 4460mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6(Max) |
| Verpackungsbreite | 2.6(Max) |
| Verpackungslänge | 4.6(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Look no further than Diodes Zetex's NPN ZXTN25060BZTA general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |