Diodes IncorporatedZXTN25100DFHTAGP BJT
Trans GP BJT NPN 100V 2.5A 1810mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 0.98 |
Verpackungsbreite | 1.3 |
Verpackungslänge | 2.9 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Jump-start your electronic circuit design with this versatile NPN ZXTN25100DFHTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.