Diodes IncorporatedZXTN25100DFHTAGP BJT

Trans GP BJT NPN 100V 2.5A 1810mW 3-Pin SOT-23 T/R

Jump-start your electronic circuit design with this versatile NPN ZXTN25100DFHTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

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165.760 Stück: heute versandbereit

    Total73,14 €Price for 299

    • Service Fee  6,59 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2333+
      Manufacturer Lead Time:
      26 Wochen
      Minimum Of :
      299
      Maximum Of:
      1074
      Country Of origin:
      China
         
      • Price: 0,2446 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2333+
      Manufacturer Lead Time:
      26 Wochen
      Country Of origin:
      China
      • In Stock: 1.074 Stück
      • Price: 0,2446 €
    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1921+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 164.686 Stück
      • Price: 0,1624 €