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Diodes IncorporatedZXTP07040DFFTAGP BJT
Trans GP BJT PNP 40V 3A 2000mW 3-Pin SOT-23F T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 50 | |
| 40 | |
| 7 | |
| 1.04@150mA@3A | |
| 0.18@5mA@0.5A|0.1@100mA@1A|0.39@150mA@3A|0.4@10mA@1A|0.54@40mA@2A | |
| 3 | |
| 200@1A@2V|250@0.5A@2V|300@10mA@2V|80@3A@2V | |
| 2000 | |
| 200(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.7(Max) |
| Verpackungslänge | 3(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23F |
| 3 |
Design various electronic circuits with this versatile PNP ZXTP07040DFFTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |