Diodes IncorporatedZXTP2014ZTAGP BJT
Trans GP BJT PNP 140V 3A 2100mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 180 | |
| 140 | |
| 7 | |
| 1.01@300mA@3A | |
| 0.06@5mA@0.1A|0.075@50mA@0.5A|0.115@100mA@1A|0.33@300mA@3A | |
| 3 | |
| 100@10mA@5V|100@1A@5V|45@3A@5V | |
| 2100 | |
| 120(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6(Max) |
| Verpackungsbreite | 2.6(Max) |
| Verpackungslänge | 4.6(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Design various electronic circuits with this versatile PNP ZXTP2014ZTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |