Diodes IncorporatedZXTP2041FTAGP BJT
Trans GP BJT PNP 40V 1A 350mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 7 | |
| 1.1@50mA@1A | |
| 0.2@1mA@100mA|0.3@20mA@500mA|0.5@100mA@1A | |
| 1 | |
| 300@1mA@5V|300@100mA@5V|250@500mA@5V|160@1A@5V|30@2A@5V | |
| 350 | |
| 150(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their PNP ZXTP2041FTA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 350 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |