| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-343 |
| 4 | |
| Leitungsform | Gull-wing |
Infineon Technologies offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this BF5030WH6327XTSA1 RF amplifier. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel RF power MOSFET operates in depletion mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |