Infineon Technologies AG HF-MOSFETs
Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Gate Source Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain Source Resistance - (mOhm) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Type | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Meist Gekauft
BF998E6327HTSA1
Trans RF FET N-CH 12V 0.03A Automotive AEC-Q101 4-Pin SOT-143 T/R
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Infineon Technologies AG | HF-MOSFETs | Si | Single Dual Gate | Depletion | N | 1 | 12 | ±8 | 0.03 | 2.1@8V@Gate 1|1.2@8V@Gate 2 | 200 | MOSFET | 28 | 1000 | Tape and Reel | 4 | SOT-143 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||
PTFA092201EV4R0XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA|2-Tone | 65 | 12 | 40(Typ)@10V | 700000 | 55 | 18.5 | 920 | 960 | LDMOS | Tape and Reel | 3 | Case 36260 | No | No | No | No | EAR99 | No | |||||||||||
PTFA210701EV4XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36265 Tray
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 125(Typ)@10V | 190000 | 16.5 | 2110 | 2170 | LDMOS | Tray | 3 | Case 36265 | No | No | No | EAR99 | No | |||||||||||||
PTFB183404EV1R250XTMA1
Trans RF MOSFET N-CH 65V 9-Pin Case 36275 Tray
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 2-Tone|2-Carrier W-CDMA | 65 | 10 | 50(Typ)@10V | 340 | 17|17.5 | 1805 | 1880 | LDMOS | Tray | 9 | Case 36275 | No | No | No | EAR99 | No | |||||||||||||
F180101SV1XT
Trans RF MOSFET N-CH 65V 3-Pin Case 32259 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|CW|EDGE|W-CDMA | 65 | 12 | 830(Typ)@10V | 58000 | 15 | 19 | 1805 | 2170 | LDMOS | Tape and Reel | 3 | Case 32259 | No | No | No | EAR99 | No | ||||||||||||
BG5412KE6327XT
Trans RF MOSFET N-CH 8V 0.025A Automotive 6-Pin SOT-363 T/R
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Depletion | N | 2 | 8 | ±6 | 0.025 | 2.2@5V@Gate 1@Amp A|2@5V@Gate 1@Amp B | 200 | 34@Amp A|31@Amp B | Tape and Reel | EAR99 | No | No | ||||||||||||||||||||
BG3123H6327XTSA1
Trans RF MOSFET N-CH 8V 0.025A Automotive 6-Pin SOT-363 T/R
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Infineon Technologies AG | HF-MOSFETs | Dual | Depletion | N | 2 | 8 | ±6 | 0.025 | 1.5@5V@Gate 1@Amp B|1.9@5V@Gate 1@Amp A | 200 | 30@Amp B|32@Amp A | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||
PTVA120251EAV2R0XTMA1
Thermally-Enhanced High Power RF LDMOS Fet
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Infineon Technologies AG | HF-MOSFETs | Tape and Reel | EAR99 | No | |||||||||||||||||||||||||||||||
PTVA104501EHV1R0XTMA1
Trans RF MOSFET N-CH 105V T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | Pulsed RF | 105 | 12 | 100(Typ)@10V | 450 | 17.5 | 960 | 1215 | LDMOS | Tape and Reel | EAR99 | No | ||||||||||||||||||
PTFC270101MV1R1KXUMA1
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 -2700 MHz
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Infineon Technologies AG | HF-MOSFETs | Tape and Reel | EAR99 | No | |||||||||||||||||||||||||||||||
PTFB181702FCV1R0XTMA1
Trans RF MOSFET N-CH 65V 5-Pin Case H-37248 T/R
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 2-Carrier W-CDMA | 65 | 3.5 | 110(Typ)@10V | 180 | 19 | 1805 | 1880 | LDMOS | Tape and Reel | EAR99 | No | ||||||||||||||||||
PTFB193404FV1R250XTMA1
Trans RF MOSFET N-CH 65V 7-Pin Case 37275 T/R
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 2-Tone|1-Carrier W-CDMA|2-Carrier W-CDMA | 65 | 10 | 50(Typ)@10V | 100 | 19 | 1930 | 1990 | LDMOS | Tape and Reel | EAR99 | No | ||||||||||||||||||
PTFA180701EV4R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36265 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|CW|GSM|GSM EDGE | 65 | 12 | 125(Typ)@10V | 201000 | 70 | 16.5 | 1805 | 1880 | LDMOS | Tape and Reel | EAR99 | No | |||||||||||||||||
PTFA080551FV4R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 37265 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|EDGE | 65 | 12 | 150(Typ)@10V | 219000 | 26 | 18.5 | 869 | 960 | LDMOS | Tape and Reel | EAR99 | No | |||||||||||||||||
PTFA080551EV4R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36265 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|EDGE | 65 | 12 | 150(Typ)@10V | 219000 | 26 | 18.5 | 869 | 960 | LDMOS | Tape and Reel | EAR99 | No | |||||||||||||||||
PTFA041501EV4R0XTMA1
Trans RF MOSFET N-CH 65V T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 1-Carrier CDMA IS-95|2-Tone | 65 | 12 | 70(Typ)@10V | MOSFET | 60 | 21 | 420 | 500 | LDMOS | Tape and Reel | EAR99 | No | |||||||||||||||||
PTF080101S V1
Trans RF FET N-CH 65V 3-Pin Case 32259
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|EDGE | 65 | 12 | 830(Typ)@10V | 58000 | 13 | 18.5 | 860 | 960 | LDMOS | 3 | Case 32259 | No | No | No | No | No | EAR99 | No | |||||||||||
PTF080101M V1
Trans RF MOSFET N-CH 65V 10-Pin RFP
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Infineon Technologies AG | HF-MOSFETs | Single Hex Gate Quint Drain | Enhancement | N | 1 | 2-Tone | 65 | 12 | 830(Typ)@10V | 18800 | 12.5 | 16(Min) | 450 | 960 | LDMOS | 10 | RFP | RFP | No | No | No | No | No | EAR99 | No | No | |||||||||
PTF240101S V1
Trans RF MOSFET N-CH 65V 3-Pin Case 32259
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|CDMA2000|CW | 65 | 12 | 830(Typ)@10V | 58000 | 15 | 16 | 2400 | 2700 | LDMOS | 3 | Case 32259 | No | No | No | No | No | EAR99 | No | |||||||||||
PTFA092211ELV4XWSA1
Trans RF FET N-CH 65V 3-Pin Case 33288 Tray
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA|2-Tone | 65 | 12 | 40(Typ)@10V | 700000 | MOSFET | 250 | 18 | 920 | 960 | LDMOS | Tray | 3 | Case 33288 | No | No | No | EAR99 | No | |||||||||||
PTFB211803FLV2R250XTMA1
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA|CW | 65 | 10 | 50(Typ)@10V | 180 | 17.5 | 2110 | 2170 | LDMOS | Tape and Reel | 5 | Case 34288-4/2 | No | No | No | EAR99 | No | |||||||||||||
PXAC210552MD P2 Cellular infrastructure RF power transistor |
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Infineon Technologies AG | HF-MOSFETs | No | No | ||||||||||||||||||||||||||||||||
PTFA190451EV4R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36265 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|W-CDMA | 65 | 12 | 910(Typ)@10V | 192000 | 11 | 17.5 | 1930 | 1990 | LDMOS | Tape and Reel | 3 | Case 36265 | No | No | No | EAR99 | No | ||||||||||||
PTFA212001FV4R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 37260 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 50(Typ)@10V | 625000 | 220 | 15.9 | 2110 | 2170 | LDMOS | Tape and Reel | 3 | Case 37260 | No | No | No | EAR99 | No | ||||||||||||
PTFA210601EV4XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36265
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Tone|W-CDMA | 65 | 12 | 150(Typ)@10V | 196000 | 12 | 16 | 2110 | 2170 | LDMOS | 3 | Case 36265 | No | No | No | EAR99 | No |