Infineon Technologies AG HF-MOSFETs
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Gate Source Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain Source Resistance - (mOhm) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BF 2040W H6814
Trans RF FET N-CH 8V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
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Bestand
45
0,0328 €
pro Stück
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Infineon Technologies AG | HF-MOSFETs | Si | Single Dual Gate | Depletion | N | 1 | 8 | 6 | 0.04 | 2.9@5V@Gate 1 | 200 | 23 | 1000 | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||
| PTFA220041MV4XUMA1 Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R |
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 2010(Typ)@10V | 4 | 19 | 700 | 2200 | LDMOS | Tape and Reel | 10 | SON EP | SON | No | No | No | No | No | 5A991 | No | ||||||||
| PTFA220121MV4XUMA1 Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R |
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 2010(Typ)@10V | 12 | 20.5 | 700 | 2200 | LDMOS | Tape and Reel | 10 | SON EP | SON | No | No | No | No | No | EAR99 | No | ||||||||
PTVA104501EHV1R0XTMA1
Trans RF MOSFET N-CH 105V 3-Pin Case 33288 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | Pulsed RF | 105 | 12 | 100(Typ)@10V | 450 | 17.5 | 960 | 1215 | LDMOS | Tape and Reel | 3 | Case 33288 | No | No | No | No | EAR99 | No | ||||||||||
| PTVA120251EAV1R250XTMA1 Trans RF MOSFET N-CH 105V 3-Pin Case 36265 T/R |
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | Pulsed RF | 105 | 12 | 1400(Typ)@10V | 25 | 17 | 1200 | 1400 | LDMOS | Tape and Reel | 3 | Case 36265 | No | No | No | No | No | EAR99 | No | |||||||||
| PXFC193808SVV1R250XTMA1 Trans RF MOSFET N-CH 65V 7-Pin Case H-37275G-6/2 T/R |
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 10 | 190(Typ)@10V | 380 | 21 | 1805 | 1880 | LDMOS | Tape and Reel | 7 | Case H-37275G-6/2 | No | No | No | No | EAR99 | No | ||||||||||
PXFC192207SHV1R250XTMA1
Trans RF MOSFET N-CH 65V 5-Pin Case H-37288G-4/2 T/R
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA | 65 | 10 | 30(Typ)@10V | 50 | 20 | 1805 | 1990 | LDMOS | Tape and Reel | 5 | Case H-37288G-4/2 | No | No | No | No | No | 5A991b. | No | |||||||||
BF2040E6814HTSA1
Trans RF MOSFET N-CH 8V 0.04A Automotive AEC-Q101 4-Pin SOT-143 T/R
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Infineon Technologies AG | HF-MOSFETs | Si | Single Dual Gate | Depletion | N | 1 | 8 | 6 | 0.04 | 2.9@5V@Gate 1 | 200 | 23 | 1000 | Tape and Reel | 4 | SOT-143 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||
| PTFB193404FV1R0XTMA1 Trans RF MOSFET N-CH 65V 7-Pin Case 37275 T/R |
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone | 65 | 10 | 50(Typ)@10V | 100 | 19 | 1930 | 1990 | LDMOS | Tape and Reel | 7 | Case 37275 | No | No | No | No | No | EAR99 | No | |||||||||
| PTFB210801FAV1R250XTMA1 Trans RF MOSFET N-CH 65V 3-Pin Case 37265 T/R |
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Infineon Technologies AG | HF-MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA | 65 | 10 | 50(Typ)@10V | 25 | 18.5 | 2110 | 2170 | LDMOS | Tape and Reel | 3 | Case 37265 | Yes | No | No | No | No | EAR99 | No | |||||||||
PTFA072401FLV5R0XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 34288 T/R
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Infineon Technologies AG | HF-MOSFETs | Tape and Reel | 3 | Case 34288 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||
| PTFC270051MV2R1KXUMA1 High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 -2700 MHz |
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Infineon Technologies AG | HF-MOSFETs | Tape and Reel | 10 | SON EP | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||
PXAC241702FCV1R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case H-37248 T/R
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Infineon Technologies AG | HF-MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 10 | 190(Typ)@10V | 150 | 16.5 | 2300 | 2400 | LDMOS | Tape and Reel | 3 | Case H-37248 | No | No | No | No | EAR99 | No |