Infineon Technologies AG FET-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Material | Channel Type | Configuration | Channel Mode | Number of Elements per Chip | Maximum Gate Source Voltage - (V) | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Type | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain Source Resistance - (Ohm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IGOT60R070D1AUMA3
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
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Bestand
659
Von 6,106 € bis 6,2201 €
pro Stück
|
Infineon Technologies AG | JFETs | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGLD60R190D1AUMA3
Trans JFET N-CH 600V 10A GaN 8-Pin LSON EP T/R
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Infineon Technologies AG | JFETs | GaN | N | Single Quad Drain Triple Source | 10000 | 62500 | Tape and Reel | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||
IGLD60R070D1AUMA1
Trans JFET N-CH 600V 15A GaN 8-Pin LSON EP T/R
|
Bestand
3.887
Von 8,0887 € bis 11,9313 €
pro Stück
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Infineon Technologies AG | JFETs | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGLR60R190D1XUMA1
Trans JFET N-CH 600V 12.8A GaN 8-Pin TSON EP T/R
|
Bestand
590
Von 1,9301 € bis 3,6233 €
pro Stück
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Infineon Technologies AG | JFETs | 8 | TSON EP | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||
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IGOT60R070D1AUMA1
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
|
Bestand
202
Von 9,1239 € bis 11,9313 €
pro Stück
|
Infineon Technologies AG | JFETs | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGT60R070D1ATMA4
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
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Bestand
1.980
Von 10,2644 € bis 10,3522 €
pro Stück
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Infineon Technologies AG | JFETs | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGO60R070D1AUMA2
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
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Infineon Technologies AG | JFETs | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGT60R190D1SATMA1
Trans JFET N-CH 600V 12.5A GaN 9-Pin(8+Tab) HSOF T/R
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Infineon Technologies AG | JFETs | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
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IGLD60R070D1AUMA3
Trans JFET N-CH 600V 15A GaN 8-Pin LSON EP T/R
|
Bestand
82
Von 10,3522 € bis 10,5276 €
pro Stück
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Infineon Technologies AG | JFETs | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
PTFA092201EV4R0XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 T/R
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Infineon Technologies AG | HF-MOSFETs | 3 | Case 36260 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||
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Meist Gekauft
BF998E6327HTSA1
Trans RF FET N-CH 12V 0.03A Automotive AEC-Q101 4-Pin SOT-143 T/R
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Infineon Technologies AG | HF-MOSFETs | 4 | SOT-143 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||
IGLR65R140D2XUMA1
Trans JFET N-CH 650V 13A GaN 8-Pin TSON EP T/R
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Infineon Technologies AG | JFETs | 8 | TSON EP | EAR99 | No | |||||||||||||||||||||||||||||
IGOT65R025D2AUMA1
Trans JFET N-CH 650V 61A GaN 20-Pin DSO EP T/R
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Infineon Technologies AG | JFETs | 20 | DSO EP | SO | EAR99 | Yes | Yes | |||||||||||||||||||||||||||
PTFA091503ELV4XWSA1
Trans RF MOSFET N-CH 65V 7-Pin Case 33288 Tray
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Infineon Technologies AG | HF-MOSFETs | N | Enhancement | 12 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 150 | 17 | 920 | 960 | 70(Typ)@10V | LDMOS | Tray | EAR99 | No | |||||||||||||||||||
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PTFA212001EV4XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 Tray
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Infineon Technologies AG | HF-MOSFETs | N | Single | Enhancement | 1 | 12 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone|CW | 65 | 625000 | 220 | 15.9 | 2110 | 2170 | 50(Typ)@10V | LDMOS | Tray | EAR99 | No | ||||||||||||||||
| PTFB211501EV1XWSA1 Trans RF MOSFET N-CH 65V Tray |
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Infineon Technologies AG | HF-MOSFETs | EAR99 | No | |||||||||||||||||||||||||||||||
PTVA123501ECV2XWSA1
Trans RF MOSFET 105V Tray
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Infineon Technologies AG | HF-MOSFETs | EAR99 | No | |||||||||||||||||||||||||||||||
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IGOT65R045D2AUMA1
Trans JFET N-CH 650V 34A GaN 20-Pin DSO EP T/R
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Infineon Technologies AG | JFETs | 20 | DSO EP | SO | EAR99 | Yes | Yes | |||||||||||||||||||||||||||
IGT65R055D2ATMA1
Trans JFET N-CH 650V 31A GaN 9-Pin(8+Tab) HSOF T/R
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Infineon Technologies AG | JFETs | 9 | HSOF | |||||||||||||||||||||||||||||||
| PTVA030121EAV1XWSA1 Thermally-Enhanced High Power RF LDMOS FET |
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Infineon Technologies AG | HF-MOSFETs | EAR99 | No | |||||||||||||||||||||||||||||||
PTFB181702FCV1XWSA1
Trans RF MOSFET N-CH 65V 5-Pin Case H-37248 Tray
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Infineon Technologies AG | HF-MOSFETs | 5A991g. | No | |||||||||||||||||||||||||||||||
PTFA072401FLV5XWSA1
Trans RF MOSFET N-CH 65V 3-Pin Case 34288 Tray
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Infineon Technologies AG | HF-MOSFETs | EAR99 | No | |||||||||||||||||||||||||||||||
IGLT65R025D2AUMA1
Trans JFET N-CH 650V 67A GaN 16-Pin HDSOP EP T/R
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Infineon Technologies AG | JFETs | 16 | HDSOP EP | SO | EAR99 | Yes | Yes | |||||||||||||||||||||||||||
IJW120R070T1FKSA1
High Reliability JFETs IC
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Infineon Technologies AG | JFETs | EAR99 | No | No | ||||||||||||||||||||||||||||||
| BF5030WE6327XT Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-343 T/R |
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Infineon Technologies AG | HF-MOSFETs | EAR99 | No |