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Infineon Technologies AGBF998E6327HTSA1HF-MOSFETs
Trans RF FET N-CH 12V 0.03A Automotive AEC-Q101 4-Pin SOT-143 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| BF998E6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-143 |
| 4 | |
| Leitungsform | Gull-wing |
Ideal for radio frequency environments this BF998E6327HTSA1 RF amplifier from Infineon Technologies is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in depletion mode.
| EDA / CAD Models |