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| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Beschreibung | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Typical Fall Time - (ns) | Maximum Gate Threshold Voltage - (V) | Supplier Package | Typical Rise Time - (ns) | Tradename | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Maximum Drain Source Resistance - (mOhm) | Channel Type | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Pin Count | Maximum Gate Source Voltage - (V) | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
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Datenblatt für 2 Produkte: Anzeigen
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Datenblatt ansehen |
Verschiedenes
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GaN Systems | Verschiedenes | Power MOSFET | Single | 1 | Enhancement | 8 | Verschiedenes | 4.8 | 5 to 10 | 650 | Verschiedenes | 1.6@6V | 285@6V | N | 8 | GaN | 2.4 | Yes | Verschiedenes | 7 | Active | 6 | 54@400V | ||||||||||||||
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GS-065-008-1-L-MR
Trans MOSFET N-CH GaN 650V 8A 8-Pin PDFN EP Reel
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GaN Systems | Trans MOSFET N-CH GaN 650V 8A 8-Pin PDFN EP Reel | Power MOSFET | Single | 1 | Enhancement | 8 | PDFN EP | 4.8 | 5 to 10 | 650 | FOM Island | 1.6@6V | 285@6V | N | 8 | GaN | 2.4 | Yes | 8 | 7 | Active | 6 | 54@400V | |||||||||||||||
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GS-065-008-1-L-TR
Trans MOSFET N-CH GaN 650V 8A
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GaN Systems | Trans MOSFET N-CH GaN 650V 8A | Power MOSFET | Single | 1 | Enhancement | 8 | 4.8 | 5 to 10 | 650 | 1.6@6V | 285@6V | N | 8 | GaN | 2.4 | Yes | 7 | Active | 6 | 54@400V |