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| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Beschreibung | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Maximum Gate Threshold Voltage - (V) | Typical Fall Time - (ns) | Supplier Package | Tradename | Typical Rise Time - (ns) | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Channel Type | Maximum Drain Source Resistance - (mOhm) | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Maximum Gate Source Voltage - (V) | Pin Count | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
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Datenblatt für 2 Produkte: Anzeigen
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Datenblatt ansehen |
Verschiedenes
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WOLFSPEED, INC | Verschiedenes | Power MOSFET | Single | 1 | Enhancement | Verschiedenes | 20 to 50 | 1200 | 71@20V | N | 98@20V | 36 | SiC | Verschiedenes | 25 | Verschiedenes | Verschiedenes | 1130@1000V | |||||||||||||||||||
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CPM2-1200-0080A
Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin Die
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WOLFSPEED, INC | Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin Die | Power MOSFET | Single | 1 | Enhancement | Die | 20 to 50 | 1200 | 71@20V | N | 98@20V | 36 | SiC | Yes | 25 | 3 | NRND | 1130@1000V | ||||||||||||||||||||
| CPM2-1200-0080A-FE6 Trans MOSFET N-CH SiC 1.2KV 36A |
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WOLFSPEED, INC | Trans MOSFET N-CH SiC 1.2KV 36A | Power MOSFET | Single | 1 | Enhancement | 20 to 50 | 1200 | 71@20V | N | 98@20V | 36 | SiC | 25 | 1130@1000V |