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| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Beschreibung | Typical Operating Supply Voltage - (V) | Data Bus Width - (bit) | Organization | Maximum Operating Current - (mA) | Maximum Clock Rate - (MHz) | Maximum Operating Temperature - (°C) | Minimum Operating Supply Voltage - (V) | Minimum Operating Temperature - (°C) | Number of Internal Banks | Address Bus Width - (bit) | ROHS | Pin Count | Number of Bits per Word - (bit) | Supplier Package | Life Cycle | Type | Density - (bit) | Number of Words per Bank | Maximum Access Time - (ns) | Packaging | Maximum Operating Supply Voltage - (V) | Interface Type | Density in Bits - (bit) | Package Family Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Datenblatt für 3 Produkte: Anzeigen
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Verschiedenes
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Nanya Technology | DRAM-Chip | Verschiedenes | 32 | 128Mx32 | 1066 | 8 | 17 | Yes | Verschiedenes | 32 | Verschiedenes | Active | Mobile LPDDR2 SDRAM | 4G | 16M | HSUL_12 | 4294967296 | Verschiedenes | ||||||||
| NT6TL128M32BA-G0I DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA |
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Nanya Technology | DRAM-Chip | DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA | 32 | 128Mx32 | 1066 | 8 | 17 | Yes | 134 | 32 | FBGA | Active | Mobile LPDDR2 SDRAM | 4G | 16M | HSUL_12 | 4294967296 | BGA | |||||||||
| NT6TL128M32BA-G0I DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA |
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Nanya Technology | DRAM-Chip | DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA | 32 | 128Mx32 | 1066 | 8 | 17 | Yes | 134 | 32 | FBGA | Active | Mobile LPDDR2 SDRAM | 4G | 16M | HSUL_12 | 4294967296 | BGA | |||||||||
| NT6TL128M32BA-G0H DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V |
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Nanya Technology | DRAM-Chip | DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V | 32 | 128Mx32 | 1066 | 8 | 17 | Yes | 32 | Active | Mobile LPDDR2 SDRAM | 4G | 16M | HSUL_12 | 4294967296 |