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| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Beschreibung | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Maximum Gate Threshold Voltage - (V) | Typical Fall Time - (ns) | Supplier Package | Tradename | Typical Rise Time - (ns) | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Channel Type | Maximum Drain Source Resistance - (mOhm) | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Maximum Gate Source Voltage - (V) | Pin Count | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
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Datenblatt für 4 Produkte: Anzeigen
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Datenblatt ansehen |
Verschiedenes
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D3 Semiconductor, LLC | Verschiedenes | Verschiedenes | Verschiedenes | ||||||||||||||||||||||||||||||||||
D3S080N65D-U
Trans MOSFET N-CH 650V 40.8A 3-Pin(3+Tab) TO-247 Tube
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D3 Semiconductor, LLC | Trans MOSFET N-CH 650V 40.8A 3-Pin(3+Tab) TO-247 Tube | |||||||||||||||||||||||||||||||||||||
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D3S080N65E-U
Trans MOSFET N-CH 650V 29.1A T/R
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D3 Semiconductor, LLC | Trans MOSFET N-CH 650V 29.1A T/R | |||||||||||||||||||||||||||||||||||||
D3S080N65B-U
Trans MOSFET N-CH 650V 40.8A 3-Pin(3+Tab) TO-220 Tube
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D3 Semiconductor, LLC | Trans MOSFET N-CH 650V 40.8A 3-Pin(3+Tab) TO-220 Tube | |||||||||||||||||||||||||||||||||||||
D3S080N65F-U
650V, 29.1A N-Channel Enhancement Mode Super Junction Power MOSFET
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D3 Semiconductor, LLC | 650V, 29.1A N-Channel Enhancement Mode Super Junction Power MOSFET | Yes | Active |