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| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Beschreibung | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Typical Fall Time - (ns) | Maximum Gate Threshold Voltage - (V) | Supplier Package | Typical Rise Time - (ns) | Tradename | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Maximum Drain Source Resistance - (mOhm) | Channel Type | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Pin Count | Maximum Gate Source Voltage - (V) | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
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Datenblatt für 2 Produkte: Anzeigen
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Verschiedenes
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GaN Systems | Trans MOSFET N-CH GaN 650V 11A 8-Pin PDFN EP | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 10 | PDFN EP | 5 | 10 to 20 | 650 | FOM Island | 2.2@6V | 195@6V | N | 11 | GaN | 5 | Yes | 8 | 7 | Active | 8 | 70@400V | ||||||||||||||
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GS-065-011-2-L-TR
Trans MOSFET N-CH GaN 650V 11A 8-Pin PDFN EP
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GaN Systems | Trans MOSFET N-CH GaN 650V 11A 8-Pin PDFN EP | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 10 | PDFN EP | 5 | 10 to 20 | 650 | FOM Island | 2.2@6V | 195@6V | N | 11 | GaN | 5 | Yes | 8 | 7 | Active | 8 | 70@400V | |||||||||||||||
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GS-065-011-2-L-MR
Trans MOSFET N-CH GaN 650V 11A 8-Pin PDFN EP
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GaN Systems | Trans MOSFET N-CH GaN 650V 11A 8-Pin PDFN EP | Power MOSFET | Single Quad Drain Triple Source | 1 | Enhancement | 10 | PDFN EP | 5 | 10 to 20 | 650 | FOM Island | 2.2@6V | 195@6V | N | 11 | GaN | 5 | Yes | 8 | 7 | Active | 8 | 70@400V |