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| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Beschreibung | Maximum Junction Case Thermal Resistance | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Channel Mode | Maximum Gate Threshold Voltage - (V) | Typical Fall Time - (ns) | Tradename | Supplier Package | Typical Rise Time - (ns) | Maximum Continuous Drain Current Range - (A) | Maximum Drain Source Voltage - (V) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Channel Type | Maximum Drain Source Resistance - (mOhm) | Maximum IDSS - (uA) | Maximum Junction Ambient Thermal Resistance | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Material | Minimum Operating Temperature - (°C) | Typical Turn-On Delay Time - (ns) | ROHS | Maximum Gate Source Voltage - (V) | Pin Count | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
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Efficient Power Conversion Corporation | Trans MOSFET N-CH GaN 200V 14A 6-Pin Die T/R | Power MOSFET | Single Dual Drain Triple Source | 1 | Enhancement | eGaN® | Die | 10 to 20 | 200 | 4.5@5V | N | 22@5V | 14 | GaN | Yes | 6 | 6 | Active | 454@100V | ||||||||||||||||||
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EPC2207
Trans MOSFET N-CH GaN 200V 14A 6-Pin Die T/R
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Efficient Power Conversion Corporation | Trans MOSFET N-CH GaN 200V 14A 6-Pin Die T/R | Power MOSFET | Single Dual Drain Triple Source | 1 | Enhancement | eGaN® | Die | 10 to 20 | 200 | 4.5@5V | N | 22@5V | 14 | GaN | Yes | 6 | 6 | Active | 454@100V |