Samsung Electronics Datenspeicher
Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Main Category | Density - (bit) | Cell Type | Subcategory | Density in Bits - (bit) | Total Density | Organization | Architecture | Programmability | Number of Bits per Word - (bit) | Boot Block | Number of Internal Banks | Module Type | Number of Words per Bank | Number of Chip per Module | Data Rate Architecture | Timing Type | Minimum Operating Supply Voltage - (V) | Maximum Operating Frequency - (MHz) | Data Bus Width - (bit) | Chip Density - (bit) | Number of Ports | Maximum Clock Rate - (MHz) | Number of Words | Maximum Access Time - (ns) | Interface Type | Process Technology | Address Bus Width - (bit) | Chip Configuration | Chip Package Type | Maximum Operating Current - (mA) | Maximum Operating Supply Voltage - (V) | Supplier Temperature Grade | ECC Support | Number of Ranks | CAS Latency | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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K4A4G165WE-BCRCT00
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA
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Samsung Electronics | DRAM-Chip | DDR4 SDRAM | 4G | 4294967296 | 256Mx16 | 16 | 16 | 16M | 16 | 2400 | POD | Commercial | 96 | FBGA | BGA | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||
K4A4G085WE-BCRC
DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V 78-Pin FBGA
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Samsung Electronics | DRAM-Chip | DDR4 SDRAM | 4G | 4294967296 | 512Mx8 | 8 | 16 | 32M | 8 | 2400 | 0.175 | POD | 17 | Commercial | 78 | FBGA | BGA | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||
K4A4G165WE-BCPB
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA
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Samsung Electronics | DRAM-Chip | DDR4 SDRAM | 4G | 4294967296 | 256Mx16 | 16 | 8 | 32M | 16 | 2133 | 0.18 | POD | 20 | Commercial | 96 | FBGA | BGA | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||
K4B1G1646G-BCH900 DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA |
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Samsung Electronics | DRAM-Chip | DDR3 SDRAM | 1G | 1073741824 | 64Mx16 | 16 | 8 | 8M | 16 | 96 | FBGA | BGA | Unknown | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||
K4B1G1646G-BCNBT000 1GB G-DIE DDR3 SDRAM X16 ONLY |
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Samsung Electronics | DRAM-Chip | 1073741824 | 96 | FBGA | BGA | Unknown | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||
K4B2G1646Q-BMK0000 DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin FBGA |
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Samsung Electronics | DRAM-Chip | 96 | FBGA | BGA | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||
K4B4G1646D-BCNB
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 90-Pin FBGA
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Samsung Electronics | DRAM-Chip | DDR3 SDRAM | 4G | 4294967296 | 256Mx16 | 16 | 8 | 32M | 16 | 2133 | 0.18 | SSTL_1.5 | 18 | Commercial | 90 | FBGA | BGA | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||
K4E6E304EB-EGCF
DRAM Chip Mobile LPDDR3 SDRAM 16Gbit 512Mx32 1.2V/1.8V 178-Pin FBGA
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Samsung Electronics | DRAM-Chip | 178 | FBGA | BGA | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||
K4E8E324EB-EGCG K4E8E324EB-EGCG^SAMSUNG |
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Samsung Electronics | DRAM-Chip | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||
K4FBE3D4HM-GHCL02V
DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin FPGA
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Samsung Electronics | DRAM-Chip | Mobile LPDDR4 SDRAM | 32G | 34359738368 | 1Gx32 | 32 | 32 | 4266 | 200 | FPGA | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||
K4A8G085WB-BCPB000
DRAM Chip DDR4 SDRAM 8Gbit 1Gx8 1.2V 78-Pin FBGA
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Samsung Electronics | DRAM-Chip | DDR4 SDRAM | 8G | 8589934592 | 1Gx8 | 8 | 16 | 64M | 8 | 1067 | POD | 18 | Commercial | EAR99 | No | |||||||||||||||||||||||||||||||||||||
K4A8G165WC-BCRC
DRAM Chip DRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
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Samsung Electronics | DRAM-Chip | DRAM | 8G | 8589934592 | 512Mx16 | 16 | 2400 | 96 | FBGA | BGA | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||
K4F6E3S4HM-GHCL02V
DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA
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Samsung Electronics | DRAM-Chip | Mobile LPDDR4 SDRAM | 16G | 17179869184 | 512Mx32 | 32 | 32 | 4266 | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
K4S561632J-UC75
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II
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Samsung Electronics | DRAM-Chip | SDRAM | 256M | 268435456 | 16Mx16 | 16 | 4 | 4M | 16 | 133 | 5.4|6 | LVTTL | 15 | Commercial | 54 | TSOP-II | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||
KLM8G1GEUF-B04P
High-Performance eMMC Flash
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Samsung Electronics | Flash | 64G | 68719476736 | Synchronous | Serial e-MMC | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||
KLM8G1WEPD-B03100 Managed NAND Flash Memory |
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Samsung Electronics | Flash | Unknown | Unknown | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||
KLMAG1JETD-B041
16GB NAND Flash Memory
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Samsung Electronics | Flash | 128G | NAND | 137438953472 | Sectored | Synchronous | Serial e-MMC | No | No | No | No | 3A991.b.1.a | No | |||||||||||||||||||||||||||||||||||||||
KLMCG2KCTA-B041
Memory Module EMMC 64 GB
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Samsung Electronics | Memory Modules | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
KLMBG4GEUF-B04P
Embedded mmc Solution Storage
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Samsung Electronics | Flash | 256G | 274877906944 | Synchronous | Serial e-MMC | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||
KLMDG4UCTA-B0410 Mainstream, eMMC v5.0 Flash |
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Samsung Electronics | Flash | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
KLMDG8JENB-B0410 128Gb, eMMC v5.1, Flash |
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Samsung Electronics | Flash | 1T | 1099511627776 | Synchronous | Serial e-MMC | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||
KLMCG4JETD-B0410
NAND Flash Serial e-MMC 3V/3.3V 512G-bit 512G/128G/64G x 1/4-bit/8-bit 153-Pin FBGA
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Samsung Electronics | Flash | 512G | NAND | 549755813888 | Yes | 1/4/8 | Yes | Synchronous | 512G/128G/64G | Serial e-MMC | Yes | 153 | FBGA | BGA | Unknown | No | No | No | No | 3A991.b.1.a | No | |||||||||||||||||||||||||||||||
K6R4008C1D-KI10 SRAM Chip Async Single 5V 4M-bit 512K x 8 10ns 36-Pin SOJ |
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Samsung Electronics | SRAM-Chip | 4M | 4194304 | 8 | SDR | Asynchronous | 1 | 512K | 10 | CMOS | 19 | Industrial | 36 | SOJ | SOJ | No | No | No | No | No | 3A991.b.2.a | No | ||||||||||||||||||||||||||||||
K7D803671B-HC25000 256KX36 AND 512KX18 SRAM |
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Samsung Electronics | SRAM-Chip | Unknown | Unknown | Unknown | Unknown | Unknown | 3A991b.2.a. | No | ||||||||||||||||||||||||||||||||||||||||||||
M386B4G70DM0-YK0 DDR3 SDRAM Load Reduced Registered Modules |
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Samsung Electronics | Memory Modules | 288 | LRDIMM | DIMM | No | No | No | No | No |