EV1HMC349AMS8G, Evaluation Board for HMC349AMS8G 100 MHz to 4 GHz SPDT Switch
Referenzdesign unter Verwendung des Teils HMC349AMS8G von Analog Devices
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Für Endprodukte
- Cellular Infrastructure
- Mobile Radios
- Test Equipment
- Wireless Infrastructure
Beschreibung
- EV1HMC349AMS8G, Evaluation Board for the HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm
Haupteigenschaften
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Switch TypeSingle SPDT
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Switching Frequency100000 to 4000000 KHz
Empfohlene Bauteile (1)
| Teilenummer | Hersteller | Typ | Beschreibung | |||
|---|---|---|---|---|---|---|
|
HMC349AMS8G | Analog Devices | RF Switches | RF Switch SPDT 100MHz to 4GHz 42dB 8-Pin MSOP EP T/R | In den Warenkorb | |