IGBTs are fairly common devices for power applications that can be used for AC motor control outputs. The TO247-4L IGBTs from ON Semiconductor provide higher performance and better cost-effectiveness for related applications. How does it work? Let's take a closer look at it.
Reduces Eon Losses by TO-247-4L IGBTs package
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It switches electric power in many applications: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts and air-conditioners. The traditional bipolar junction transistor (BJT) has a small RDS(on), but the drive current is large, and the MOSFET's RDS(on) is large, but it has the advantage of small driving current. IGBT is the combination of the advantages of both: not only drive current is small, RDS(on) is also very low.
The IGBT with four alternating layers (P-N-P-N) is controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse-width modulation and low-pass filters. An IGBT cell is constructed similarly to an n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET.
The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.
ON Semiconductor launched TO247-4L IGBTs series that feature a robust and cost-effective Field Stop II Trench construction, and provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
ON Semiconductor’s TO-247-4L IGBTs package by TO-247-4L format can reduce Eon losses compared to standard TO-247-3L package, and comes with separated pins for switching that can reduce Eon losses by over 60%. It is built by extremely efficient Trench Field Stop II technology and optimized for high-speed switching that features low on-state voltage and minimizes switching losses benefits. It can improve gate control and lower switching losses with optimized high-speed switching. Integrated soft and fast co−packaged freewheeling diode with a low forward voltage can save board space.
ON Semiconductor’s TO-247-4L IGBTs target applications are solar inverters, uninterruptible power supplies (UPS), full & half-bridge topology and neutral point clamp topology. It can support customers requiring 1200 V solutions and benefit from the reduction in Eon switching losses that the TO-247-4L package provides. ON Semiconductor is currently the only company offering a 1200 V device in this package.
ON Semiconductor’s TO-247-4L Field Stop II IGBTs series include NGTB50N65FL2WA (650 V, 50 A), NGTB75N65FL2WA (650 V, 75 A), FGH75T65SQDTL4 (650 V, 75 A), NGTB40N120FL2WA (1200 V, 40 A), NGTB25N120FL2WA (1200 V, 25 A) and NGTB50N120FL2WA (1200 V, 50 A) and so on. Built with improved gate control that lowers switching losses, these devices feature extremely efficient Trench with Field Stop Technology, and TJmax equal to 175 °C. Separate emitter drive pin and package with TO-247-4L ensure minimal Eon loss. Optimized for high-speed switching and all Pb-Free devices, it is suitable for industrial application.
With the advanced technology of the Field Stop II Trench construction, it is effective to improve the operating efficiency of the IGBTs and reduce the Eon loss. It is an ideal choice for high power applications.
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