In the current global economic recession and the downturn in the semiconductor industry, automotive semiconductors seem to be a counter-cyclical window industry.
In the current global economic recession and the downturn in the semiconductor industry, automotive semiconductors seem to be a counter-cyclical window industry.
At the same time, with the development of the new four trends of electrification, intelligence, networking, and sharing in the automotive industry, as well as the booming market for new energy vehicles, the automotive electronics industry is experiencing a structural transformation opportunity.
The semiconductor content in new energy vehicles (such as hybrid vehicles or pure electric vehicles) is significantly higher than that in traditional vehicles.
Compared to fuel vehicles, new energy vehicles no longer use gasoline engines, fuel tanks, or transmissions. Instead, the "three-electric system" consisting of batteries, motors, and electronic control systems replaces them, with the addition of core components such as DC-DC modules, motor control systems, battery management systems, high-voltage circuits, etc. In these components, power devices such as MOSFETs and IGBTs play a crucial role.
Application of Power Semiconductors in New Energy Vehicles
Power semiconductors are the core of energy conversion and circuit control in electronic devices, mainly used to change voltages and frequencies in electronic devices, as well as DC-AC conversion, etc. The transformation of the automotive industry will drive the growth of power device consumption.
According to a report by Infineon, the value of power semiconductor devices in new energy vehicles is more than five times that in traditional fuel vehicles. In addition, power devices will also be increasingly used in electric vehicle charging stations, further expanding the market.
According to Gartner's data, the market for automotive-grade power semiconductors has the highest growth rate. In 2020, the revenue reached approximately $6.1 billion, and it is expected to reach $26.5 billion by 2030, making it the largest market in the entire automotive semiconductor market in terms of revenue.
New Growth Opportunities for Power Devices
Silicon-based MOSFETs are indispensable
MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a basic power semiconductor device. It has the characteristics of low driving power, fast switching speed, high operating frequency, and strong thermal stability. It is widely used in high-frequency and low-to-medium voltage applications, playing a role in amplification or switching circuits.
MOSFETs can be divided into two types, "N-type" and "P-type," based on the polarity of their "channels." They are often referred to as NMOSFET and PMOSFET, respectively, and they have different voltage tolerances and ranges.
In today's rising new energy vehicles, silicon-based MOSFETs are indispensable and serve as core components in automotive electronics. According to industry predictions, the automotive sector accounts for the highest proportion of MOSFET terminal applications, reaching 22% in 2022. Additionally, the proportions in PC computers and storage devices are 19% and 14% for the industrial sector.
In fact, prior to the era of new energy vehicles, MOSFETs were already used in areas of fuel vehicles involving electric functions, such as auxiliary brakes, power steering, and seat control systems.
With the advent of car electrification, there has been a significant increase in demand for MOSFETs. In electric vehicles, the use of electric braking has made medium- and high-voltage MOSFETs an important component in power domains such as DC-DC converters and onboard chargers (OBCs) to facilitate the conversion and transmission of electrical energy. The quantity of MOSFETs used per vehicle has increased to over 200 units. Additionally, with the development of intelligent automobiles, MOSFETs are required as fundamental devices for power conversion, supporting the functionality implementation of digital and analog chips in areas such as Advanced Driver Assistance Systems (ADAS), safety features, and infotainment. This has led to a potential increase in the quantity of MOSFETs used in high-end vehicles to over 400 units per vehicle.
According to data statistics, the global market size of automotive-grade MOSFETs is projected to reach $3 billion by 2026, with a compound annual growth rate (CAGR) of 12.25%.
IGBT - The Largest Increment in Automotive Power Devices
As mentioned earlier, MOSFETs are widely used in both traditional internal combustion engine vehicles and new energy vehicles. However, in the transformation of the automotive industry towards electrification, the market increment of automotive-grade MOSFETs is not as significant as that of IGBTs.
IGBT, short for Insulated Gate Bipolar Transistor, is a compound power semiconductor device composed of a Bipolar Junction Transistor (BJT) and a MOSFET. It combines the high voltage tolerance of BJT and the high input impedance of MOSFET, making it the "CPU" of new energy vehicles and a core component. IGBT directly controls the conversion of direct current (DC) and alternating current (AC) in the drive system, determining key data such as the maximum output power and torque of the new energy vehicle.
The core of an electric vehicle lies in the high-voltage (200-450V DC) battery and its related charging system. The main motor drive of an electric vehicle typically requires power device drive power ranging from 20-150 kW, with an average power of around 70 kW. Due to the higher drive power, voltage, and high energy consumption sensitivity, electric vehicle manufacturers often use IGBT modules with lower conduction voltage drop and higher operating voltage.
It can be seen that compared to silicon-based MOSFETs, IGBTs are more suitable for high-voltage operation, and the two complement each other.
In electric power drive systems, IGBTs are used in inverter modules to convert the DC power from the battery into AC power to drive the motor. In power supply systems, IGBTs are used in various AC-DC and DC-DC converters to charge the battery and perform power level conversion functions. Additionally, IGBT inverse power modules are used in electric vehicle charging stations to invert DC power into AC power, which is then transformed into different current and voltage specifications through transformer coupling and rectification units to facilitate charging electric vehicles.
In terms of market competition, IGBTs are currently dominated by major European and Japanese manufacturers, with the top five companies holding a market share of over 60%. According to statistics from Minsheng Securities, Infineon Technologies currently has a market share of 32.7%, making it an absolute giant in the IGBT field.
As for application solutions, Infineon has introduced the automotive IGBT module FS820R08A6P2B, which features a matched emitter-controlled diode and meets automotive application requirements.
Infineon Technologies' 750V HybridPACK™ Drive Module
According to the introduction, the Infineon 750V HybridPACK™ Drive Module is an ultra-compact power module optimized for hybrid and electric vehicle main inverters (xEV). This product series offers maximum voltage and power scalability with six different package versions, covering a power range of 200A-900A and a voltage range of 400V-1200V (chip rating). The use of Direct Solder Cooling (DSC) technology not only provides ample expansion possibilities but also increases efficiency by 25%.
Infineon provides various product combinations at different voltage and current levels, including bare chips, discrete devices, power modules, and components, offering a diverse range of IGBT product series. The wire-bonded FS820R08A6P2B (820A/750V) is a six-pack module optimized for a 150kW inverter. This power module incorporates EDT2 IGBT chips, featuring an automotive Micro-Pattern Trench-Field-Stop cell design. The chip offers benchmark current density, excellent short-circuit ruggedness, enhanced voltage blocking capability, ensuring reliable operation even in harsh environmental conditions. The EDT2 IGBT also exhibits outstanding light-load power loss, contributing to significantly improved system efficiency during practical cycles. The chip is optimized for switching frequencies within the 10kHz range.
In terms of value, IGBTs account for approximately 37% of the overall cost of the electric control system in new energy vehicles. They are one of the most critical electronic components in the control system, and the higher the degree of electrification, the higher the proportion of IGBTs in the vehicle. It is estimated that the global market size of IGBTs in new energy vehicles will reach nearly $4 billion by 2025, with a 5-year compound annual growth rate (CAGR) of 39.4%, indicating a significant market potential.
Currently, due to the mismatch between the explosive demand for new energy vehicles and the expansion cycle of supply, the entire automotive IGBT market is facing a severe supply shortage.
As early as 2022, it was reported in the industry that the production capacity of ON Semiconductor's Shenzhen factory for IGBTs has been completely sold out for 2023, and the company has stopped accepting new IGBT orders to mitigate the risk of non-delivery. This move demonstrates the high demand for automotive-grade IGBTs in the current market. Some supply chain vendors have indicated that there are no signs of relief in the supply-demand gap for automotive-grade IGBTs in 2023.
Silicon-based devices face limitations, and SiC Power Devices emerge as a breakthrough
For a long time, silicon-based materials have been widely used in automotive power semiconductors. However, due to the limits of their own performance, the power density of silicon-based devices is difficult to further improve, and their losses increase significantly at high switching frequencies and high voltages.
In response to this, the third-generation wide bandgap semiconductor materials, represented by SiC (Silicon Carbide) and GaN (Gallium Nitride), have gradually emerged. These materials are suitable for high power, high-frequency, and harsh operating environments, addressing the pain points of silicon-based devices.
Among them, SiC, as a new generation of wide bandgap semiconductor material, has characteristics such as a wide bandgap, high breakdown field, high saturation electron drift velocity, high thermal conductivity, and high radiation resistance. It is suitable for manufacturing devices that require high temperature, high voltage, high frequency, and high power. Therefore, the industry has high expectations for the application of SiC power devices in electric vehicles.
In terms of application scenarios, SiC power devices are primarily used in electric drives, OBC (Onboard Charger), and DC/DC conversion fields. They can significantly reduce the volume, weight, and cost of power electronic systems while increasing power density. Miniaturized and lightweight SiC devices can also reduce energy consumption caused by the vehicle's own weight.
In the application of the main drive inverter, what advantages does silicon carbide (SiC) MOSFET have over silicon-based IGBT?
- SiC MOSFET has a higher power conversion efficiency compared to silicon-based IGBT, which can extend the driving range of electric vehicles by 5-10%. This means that for the same driving range, the battery capacity can be reduced, leading to lower battery costs.
- The high-frequency characteristics of SiC MOSFET allow for the miniaturization of inverter coils and capacitors. This significantly reduces the size of the electric drive system, resulting in reduced audible noise and decreased iron losses in the motor.
- SiC MOSFET can withstand higher voltages. In the case of the same motor power, increasing the voltage can lower the current intensity, thereby enabling lightweight and space-saving wire harnesses.
Although the individual unit price of silicon carbide (SiC) devices is currently higher than Si-IGBT, the aforementioned advantages can reduce the overall cost of the vehicle system. In 2018, Tesla replaced Si IGBT with SiC devices in the Model 3, significantly improving the efficiency of the vehicle's inverter. With their excellent characteristics, SiC power devices are gaining popularity among major automakers, and currently, over 20 automotive companies worldwide have started using SiC power devices.
In response to this trend, industry-leading company Wolfspeed has expanded its AEC-Q101 automotive-grade SiC MOSFET offerings with the introduction of the 650V E3M series.
According to the information provided, Wolfspeed's new automotive-grade E3M 650V, 60mΩ MOSFET series helps designers meet the requirements of EV onboard chargers and high-voltage DC/DC converters. Utilizing Wolfspeed's third-generation SiC MOSFET technology, the E3M0060065D and E3M0060065K feature low on-resistance at high temperatures, high-speed switching capability with low capacitance, excellent body diode recovery characteristics, and a maximum junction temperature of up to 175°C.
Compared to existing 650V SiC MOSFETs available in the market, Wolfspeed's E3M 650V SiC MOSFET technology allows for lower losses and consequently lower operating temperatures, significantly improving efficiency in end applications. The reduced losses also result in lower device temperatures, which can lower overall thermal management costs and increase system-level power density.
In the era of 800V high-voltage fast charging, SiC devices are accelerating their penetration.
Simultaneously, with consumers' sensitivity to charging efficiency and time, longer range is one of the main customer demands. Industry manufacturers are actively advancing the electrification process of electric vehicles, with the majority of mainstream models currently favoring the 800V architecture. It is expected that by 2025, the penetration rate of the 800V+SiC solution will exceed 15%.
Correspondingly, if electric vehicles upgrade to an 800V voltage architecture, it requires the adoption of 1200V SiC MOSFET devices.
In response to this, ON Semiconductor introduced the NTBG014N120M3P SiC MOSFET as part of its 1200V M3P planar SiC MOSFET series last year.
It is understood that ON Semiconductor's MOSFET is optimized for power applications. The planar technology enables reliable operation with negative gate voltage drive and during turn-off transients. The series provides optimal performance with an 18V gate drive but can also be used with a 15V gate drive. It is suitable for electric vehicle charging stations, and with superior physical characteristics such as high voltage, high temperature, and high frequency capabilities, SiC MOSFETs are expected to replace silicon-based IGBTs in the era of 800V high-voltage fast charging for new energy vehicles.
NTBG014N120M3P application circuit
Recently, ON Semiconductor has launched its latest generation of 1200V EliteSiC Silicon Carbide (SiC) M3S devices, which help power electronics engineers achieve better energy efficiency and lower system costs. The new product lineup includes EliteSiC MOSFETs and modules that improve switching speed, catering to a wide range of applications in the energy infrastructure sector, such as 800V electric vehicle on-board chargers (OBCs), DC fast charging for electric vehicles, solar power solutions, and energy storage.
The product portfolio also includes the new EliteSiC M3S devices with half-bridge power integrated modules (PIMs), featuring industry-leading ultra-low Rds(on) values and utilizing the standard F2 package. These devices are designed to provide high power density and are suitable for applications in the energy infrastructure, electric vehicle DC fast charging, and uninterruptible power supplies. The 1200V EliteSiC MOSFETs designed for automotive applications are dedicated to high-power OBCs up to 22 kW and high-to-low voltage DC-DC converters. The M3S technology is developed specifically for high-speed switching applications and offers superior switching loss quality factor compared to similar products in the market.
Currently, ON Semiconductor's semiconductor products are utilized in various automotive areas, including on-board chargers, high-voltage traction battery management, DC-DC converters, high-voltage powertrain, main drive inverters, 48V belt-starter generators (BSGs), ADAS, infotainment, doors, and seat controls.
With the advantages and characteristics mentioned earlier, SiC power devices are becoming a crucial technology for enhancing the performance of electric vehicles on the 800V voltage platform. SiC chip suppliers are becoming highly sought after partners for automotive manufacturers.
In the overall market landscape, the market for SiC devices, especially automotive SiC power devices, is primarily dominated by overseas manufacturers. Leading IDM companies, including STMicroelectronics, Infineon, Wolfspeed, ROHM, and ON Semiconductor, have been deeply involved in the automotive market for many years, spanning various aspects of the industry chain from upstream materials to device manufacturing. They have established close collaborations with automotive manufacturers and Tier 1 suppliers, giving them a significant market advantage.
According to industry research data, the SiC market is expected to experience rapid growth in the coming years. By 2025, the global SiC power device market for new energy vehicles is projected to reach $3.79 billion, with a 5-year compound annual growth rate (CAGR) of 64.5%. The domestic market in China is estimated to reach $2.1 billion, with a 5-year CAGR of 72.6%, making China a major market for SiC devices in new energy vehicles.
However, despite the vast market potential, the domestic SiC industry in China is still in its early stages, and there is still a gap compared to international standards. Domestic manufacturers involved in substrate production include Shandong Tianyue and Tianke Heda. Epitaxial manufacturers include Han's Laser Technology and Dongguan Tianyu. Design manufacturers include Shanghai Zhanxin Electronics and Shanghai Hanxin. IDM manufacturers include Tech Semico, China Power, Sanan Integrated Circuit, Huahong Microelectronics, and Silan Microelectronics.
Although the domestic SiC industry has achieved a full industry chain layout, the localization rate is still relatively low. It is expected to improve with the growth of domestic demand.
Conclusion
Currently, with the transformation and rapid growth of the new energy vehicle industry, there is a rapid change happening in the on-board structure of automotive power devices. Among them, power devices account for more than 80% of the semiconductor value increment in each vehicle, making it a rapidly developing sector with a simultaneous increase in quantity and price.
In this process, automotive power devices are undergoing a transition from silicon-based MOSFETs to IGBTs and SiC devices, with material upgrades leading the way in the performance improvement and iteration of automotive power devices. This progress is driving continuous breakthroughs in the field of new energy vehicles, creating endless possibilities for the future.
As mentioned earlier, Infineon's FS820R08A6P2B is a six-pack IGBT module optimized for 150 kW inverters. It utilizes the EDT2 IGBT chip generation technology, which provides benchmark current density, excellent short-circuit withstand capability, and enhanced voltage blocking performance, ensuring reliable operation of the inverter even under harsh environmental conditions. The EDT2 IGBT also features outstanding power losses at light loads, contributing to a significant improvement in system efficiency over the actual operating cycles.
Wolfspeed has introduced the 650V E3M series automotive-grade SiC MOSFET, model E3M0060065D. It features low on-resistance at high temperatures, high-speed switching with low capacitance, excellent reverse recovery characteristics of the body diode, and a maximum junction temperature of 175°C. This product assists design engineers in meeting the requirements of EV on-board chargers and high-voltage DC/DC converters.
Analog Devices has launched the NTBG014N120M3P, which is part of their 1200V M3P planar SiC MOSFET series. It is suitable for electric vehicle charging stations and offers superior physical characteristics such as high voltage resistance, high-temperature durability, and high-frequency capabilities. SiC MOSFETs have the potential to replace silicon-based IGBTs in the era of 800V high-voltage ultra-fast charging for new energy vehicles.
In addition, industry manufacturers are continuously introducing more optimized products to help engineers achieve better energy efficiency and lower system costs.
In summary, the power device market has great potential under the leadership of the new energy vehicle industry. Relevant industry manufacturers should seize this market opportunity and time window. As a leading supplier of electronic products and related services, Arrow Electronics has abundant upstream resources and deep collaborations with international original manufacturers such as Infineon, ON Semiconductor, STMicroelectronics, Renesas, ROHM, and Wolfspeed. This ensures that customers have a highly robust and resilient supply chain.
Partners with demand can visit Arrow Electronics online store to check product prices, inventory, and lead times, and evaluate them based on their actual needs, market trends, and other factors. Adjusting procurement strategies and efforts timely and managing inventory effectively will help secure a position in the ever-changing market and win in the future.
