NXP Semiconductors Bipolar-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Configuration | Number of Elements per Chip | Maximum Continuous DC Collector Current - (mA) | Maximum Collector Base Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Emitter Base Voltage - (V) | Typical Input Resistor - (kOhm) | Maximum Base Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Maximum DC Collector Current - (A) | Operational Bias Conditions | Minimum DC Current Gain | Minimum DC Current Gain Range | Maximum Junction Ambient Thermal Resistance | Typical Input Capacitance - (pF) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Maximum 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BC846SZ
Trans GP BJT NPN 65V 0.1A 300mW 6-Pin TSSOP T/R
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NXP Semiconductors | GP BJT | 6 | TSSOP | SO | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||
BC847CW115
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R
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NXP Semiconductors | GP BJT | 3 | SC-70 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||
BC858B,215
Trans GP BJT PNP 30V 0.1A 250mW 3-Pin SOT-23 T/R
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NXP Semiconductors | GP BJT | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||
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PMBT2222A215
Trans GP BJT NPN 40V 0.6A 250mW 3-Pin SOT-23 T/R
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NXP Semiconductors | GP BJT | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No |