Infineon Technologies AG FET-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Material | Channel Type | Configuration | Channel Mode | Number of Elements per Chip | Maximum Gate Source Voltage - (V) | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain Source Resistance - (Ohm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| PTVA120251EAV1R250XTMA1 Trans RF MOSFET N-CH 105V 3-Pin Case 36265 T/R |
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Infineon Technologies AG | HF-MOSFETs | N | Single | Enhancement | 1 | 12 | Pulsed RF | 105 | 25 | 17 | 1200 | 1400 | 1400(Typ)@10V | LDMOS | Tape and Reel | 3 | Case 36265 | No | No | No | No | No | EAR99 | No | |||||||||
| PXFC193808SVV1R250XTMA1 Trans RF MOSFET N-CH 65V 7-Pin Case H-37275G-6/2 T/R |
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Infineon Technologies AG | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 10 | 1-Carrier W-CDMA | 65 | 380 | 21 | 1805 | 1880 | 190(Typ)@10V | LDMOS | Tape and Reel | 7 | Case H-37275G-6/2 | No | No | No | No | EAR99 | No | ||||||||||
PXFC192207SHV1R250XTMA1
Trans RF MOSFET N-CH 65V 5-Pin Case H-37288G-4/2 T/R
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Infineon Technologies AG | HF-MOSFETs | N | Single | Enhancement | 1 | 10 | 2-Carrier W-CDMA | 65 | 50 | 20 | 1805 | 1990 | 30(Typ)@10V | LDMOS | Tape and Reel | 5 | Case H-37288G-4/2 | No | No | No | No | No | 5A991b. | No | |||||||||
BF2040E6814HTSA1
Trans RF MOSFET N-CH 8V 0.04A Automotive AEC-Q101 4-Pin SOT-143 T/R
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Infineon Technologies AG | HF-MOSFETs | Si | N | Single Dual Gate | Depletion | 1 | 6 | 8 | 0.04 | 2.9@5V@Gate 1 | 200 | 23 | 1000 | Tape and Reel | 4 | SOT-143 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||
| IGO60R070D1AUMA1 Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R |
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Infineon Technologies AG | JFETs | GaN | N | Single Hex Drain Seven Source Dual Gate | -10(Min) | 600 | 31000 | 125000 | Tape and Reel | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
| PTFB193404FV1R0XTMA1 Trans RF MOSFET N-CH 65V 7-Pin Case 37275 T/R |
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Infineon Technologies AG | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 10 | 1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone | 65 | 100 | 19 | 1930 | 1990 | 50(Typ)@10V | LDMOS | Tape and Reel | 7 | Case 37275 | No | No | No | No | No | EAR99 | No | |||||||||
| PTFB210801FAV1R250XTMA1 Trans RF MOSFET N-CH 65V 3-Pin Case 37265 T/R |
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Infineon Technologies AG | HF-MOSFETs | N | Single | Enhancement | 1 | 10 | 2-Carrier W-CDMA | 65 | 25 | 18.5 | 2110 | 2170 | 50(Typ)@10V | LDMOS | Tape and Reel | 3 | Case 37265 | Yes | No | No | No | No | EAR99 | No | |||||||||
PTFA072401FLV5R0XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case 34288 T/R
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Infineon Technologies AG | HF-MOSFETs | Tape and Reel | 3 | Case 34288 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||
| PTFC270051MV2R1KXUMA1 High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 -2700 MHz |
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Infineon Technologies AG | HF-MOSFETs | Tape and Reel | 10 | SON EP | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||
PXAC241702FCV1R250XTMA1
Trans RF MOSFET N-CH 65V 3-Pin Case H-37248 T/R
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Infineon Technologies AG | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 10 | 1-Carrier W-CDMA | 65 | 150 | 16.5 | 2300 | 2400 | 190(Typ)@10V | LDMOS | Tape and Reel | 3 | Case H-37248 | No | No | No | No | EAR99 | No | ||||||||||
| IGT40R070D1E8220ATMA1 Trans JFET N-CH 400V 31A GaN 9-Pin(8+Tab) HSOF T/R |
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Infineon Technologies AG | JFETs | GaN | N | Single Seven Source | -10(Min) | 400 | 31000 | 125000 | 0.07 | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes |